chip Ergo resistor lineatus (GRM)

Products

Chip Resistors (GRM)

Features

Potest minuere 1.It aream et parva magnitudine et pondus eius PCB de lumine.

2.Operating ambientium temperatureï¼ -55Â ° C ~ + F 125a

3.IIigh fide et densissima metallum sit amet resistor additae corpus et defensiva iacuit per speculum rotundum trium ordinum de electrode compositionem.

4. speciem ratae partis accurata amplitudo facile conveniunt.

5.Resistance tolerantia, Â ± I%, V% Â ±.

Mensuræ ac euismod voltage

Part No.

genus

imperium

Dimensionsï¼ mmï¼

Max.
opus voltage

Resistentia range

I.

W

II

I.1

I.2

GRM0201

0201
(DCIII)

I / 20W

0.60Â ± 0,03

0.30Â ± 0,03

III \\ 0.23Â ± 0,10

0.10Â ± 0,05

0.15Â ± 0,05

25 *

1M * 10R

GRM0402

0402
(MV)

I / 16W

1.00Â ± 0.15

0.50Â ± 0,10

0.30Â ± 0,10

0.20Â ± 0,10

0.25Â ± 0,10

50v

1M * 10R

GRM0603

0603
(MDCVIII)

I / 16W
I / 10W

1.60Â ± 0.15

0.80Â ± 0.15

0.40Â ± 0,10

0.30Â ± 0.20

0.30Â ± 0.20

50v

1M * 10R

GRM0805

0805
(MMXII)

I / 10W
I / 8W

2.00Â ± 0.20

1.25Â ± 0.15

0.50Â ± 0,10

0.40Â ± 0.20

0.40Â ± 0.20

150v

1M * 10R

GRM1206

1206
(MMMCCXVI)

I / 8W
I / 4W

3.20Â ± 0.20

1.60Â ± 0.15

0.60Â ± 0,10

0.50Â ± 0.20

0.50Â ± 0.20

200v

1M * 10R

GRM1210

1210
(MMMCCXXV)

I / 4W
I / 3W

3.20Â ± 0.20

2.50Â ± 0.20

0.60Â ± 0,10

0.50Â ± 0.20

0.50Â ± 0.20

200v

1M * 10R

GRM2010

2010
((V)XXV)

I / 2W
III / 4W

5.00Â ± 0.20

2.50Â ± 0.20

0.60Â ± 0,10

0.60Â ± 0.20

0.60Â ± 0.20

200v

1M * 10R

GRM2512

2512
((VI)CDXXXII)

1W, 2W

6.40Â ± 0.20

3.50Â ± 0.20

0.60Â ± 0,10

1.00Â ± 0.20

1.00Â ± 0.20

200v

1M * 10R

test item

test conditione,

euismod

Temperature coefficiens

Normalis temperatus ad normalis temperatus et resistentia test valorem additae 100A ° C, resistentia valorem calculate per mutationem  ° C rate.

I%;
100ppm  ± /  ° C / 200ppm  ± /  ° C
% V:
200ppm  ± /  ° C / 400ppm  ± /  ° C

Brevi cultro

2.5 x rated voltage max.overload voltage vel (ut minus est) pro V secundis.

I%;
¤Ã Î ± m (I% R0 + 0.05Î ©)
% V:
¤Ã Î ± m (II% + R0 0.05Î ©)

pulsus cultro

IV, vel in x rated voltage Max. Voltage pulsus cultro (ut inferioribus) exolvuntur 10000Â ± CC temporibus (I a secunda, seconds off XXV).

¤Ã Î ± m (I% R0 + 0.05Î ©)

Terminatio vim (excute)

Et procumbens videt procul: 3 mm (10seconds)

¤Ã Î ± m (I% R0 + 0.05Î ©)

Resistentia ad calorem solderling

INMERGO 350a in C ° ± 10 a conceptu camini quia tin ~ II 3seconds.

¤Ã Î ± m (I% R0 + 0.05Î ©)

Solderability

INMERGO 245a in C ° ± 3 a conceptu camini quia tin ~ II 3seconds.

Solderling XCV% de area supra est.

Temperature revolutio

In -55Â 30min ° C, et a C + Die 25a 10-15min est ergo ad 155Â ° C + 30min, tum in 25a + 10-15min ° C, summa 5cycles.

I%;
¤Ã Î ± m (0,5% R0 + 0.05Î ©)
% V:
¤Ã Î ± m (I% R0 + 0.05Î ©)

I.oad life in humidity

ONERO rated voltage Max.working voltage vel (ut inferioribus) horis et M (dimidium-hora 1.5hours in quod off) ad 40a * ± 2 A XCV% XC ° et relativum humiditas.

I%;
¥ Â ± Î m (+ 0% I 0.1Î ©)

% V:
¤Ã Î ± m (III% R0 + 0.1Î ©)

I.oad life in heat 

ONERO rated voltage Max.working voltage vel (ut inferioribus) horis et M (dimidium-hora 1.5hours in quod off) ad F 70a ± 2 a.

I%;
¥ Â ± Î m (+ 0% I 0.1Î ©)

% V:
¤Ã Î ± m (III% R0 + 0.1Î ©)